The 1N5821 Schottky Barrier Diode is a low cost, high efficiency diode with very low forward voltage drop. The 1N5821 has a forward current rating of up to 3A and a blocking voltage of 30V. This diode is particularly useful in high frequency inverters and as a general reverse polarity protection diode.
Features of 1N5821
- Metal silicon junction, majority carrier conduction
- Low power loss
- High efficiency
- Guard-ring for over-voltage protection
- High current capability
- Low forward voltage drop
- High surge capability
- High frequency inverters
Pinout of 1N5821
Specification of 1N5821
| Package Type | DO-101 |
| Diode Type | RECTIFIER DIODE |
| Diode Element Material | Schottky |
| Operating Temperature-Max | +125 Cel |
| Output Current-Max | 3.0 A |
| Peak Repeat. Reverse Voltage | 30 V |
| Max. Reverse Current (Ir) | 2.0 mA |
| Max. RMS Reverse Voltage (Vr) | 21 V |
| Max. Forward Voltage Drop (Vf) | 0.500 V |
| Max Power Dissipation | 1.25 W |
| Average Rectified Current (Io) | 3 A |
Uses of 1N5821
The 1N5821 diode can be used for a variety of needs including: For fast switching requirements such as voltage booster circuits, buck converter circuits, RF detector circuits, solar chargers and various other solar and voltage block applications. It can also be used as a replacement for rectifier diodes with the same output current as the 1N5821, but it cannot be used as a replacement for high voltage applications. This is because it can provide a maximum output voltage of 20V.
Applications
- Power supply for electronic equipment
- Battery charging circuit
- Adapter
- Rectifier circuit
- Switching device
- Purpose of short-circuit protection
- Voltage Blocking
Equivalent of 1N5821
- 1N5820, and 1N5822.