The 1N4448 diode is a low cost, fast switching diode with a reverse voltage rating of 75V and capable of carrying up to 200mA of current. The 1N4448 diode has a forward voltage drop of 0.72V and a fast recovery time of 4ns.
Features of 1N4448
- High Reliability
- Low forward voltage
- High-speed switching
- Low reverse leakage current
- Lead-free finish, RoHS compliant
Pinout of 1N4448
Specification of 1N4448
| Package Type | DO-35 |
| Diode Type | RECTIFIER DIODE |
| Diode Element Material | SILICON |
| Reverse Recovery Time | 4 ns |
| Operating Temperature-Max | 175.0 Cel |
| Output Current-Max | 200 mA |
| Peak Repeat. Reverse Voltage | 75 V |
| Max. Reverse Current (Ir) | 0.025 mA |
| Max. RMS Reverse Voltage (Vr) | 75 V |
| Max. Forward Voltage Drop (Vf) | 0.72 V |
| Max Power Dissipation | 500 mW |
| Reverse Current | 5 µA |
| Average Rectified Current (Io) | 0.2 A |
Uses of 1N4448
The 1N4448 can be used in a variety of electronic applications. It can be used when you need to convert AC power to DC power, it can be used to block power surges to protect electronic components from being burned or damaged, and it can also be used in digital logic circuits. It is also suitable for battery charging circuits, power supply circuits, and voltage doubler circuits.
Advantages of 1N4448
- Cheap construction
- Low forward voltage drop
- Low reverse leakage
- High forward surge current capability
Applications
- High-speed switching
- General switching
- Rectification
- Components protection
- Blocking incoming voltage was not required
- Signal filtering